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Generation of nanosized grooves and holes on metal surfaces by low-temperature electron irradiationNIWASE, K; SIGLE, W; PHILLIPP, F et al.Philosophical magazine letters. 1996, Vol 74, Num 3, pp 167-174, issn 0950-0839Article

Dislocation generation in silicon grown laterally over SiO₂ by liquid phase epitaxyBANHART, F; BERGMANN, R; PHILLIPP, F et al.Applied physics. A, Solids and surfaces. 1991, Vol 53, Num 4, pp 317-323, issn 0721-7250Article

Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxyZHOU, H; PHILLIPP, F; GROSS, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 68, Num 1, pp 26-34, issn 0921-5107Article

High-temperature deformation behavior of nanocrystalline precursor-derived Si-B-C-N ceramics in controlled atmosphereKUMAR, Ravi; MAGER, R; PHILLIPP, F et al.International journal of materials research. 2006, Vol 97, Num 5, pp 626-631, issn 1862-5282, 6 p.Article

High-voltage electron microscopy in the Federal Republic of Germany : past, present, and futureSEEGER, A; PHILLIPP, F.Ultramicroscopy. 1991, Vol 39, Num 1-4, pp 32-44, issn 0304-3991Conference Paper

Size modification of self-assembled InAs quantum dots by in situ etchingSCHULER, H; JIN-PHILLIPP, N. Y; PHILLIPP, F et al.Semiconductor science and technology. 1998, Vol 13, Num 11, pp 1341-1345, issn 0268-1242Article

Investigation of self-assembled InP-GaInP quantum dot stacks by transmission electron microscopyFANTINI, A; PHILLIPP, F; KOHLER, C et al.Journal of crystal growth. 2002, Vol 244, Num 2, pp 129-135, issn 0022-0248Article

Atomic structure of a complex defect configuration in synthetic diamond: a fivefold twin centre connected to two high-order grain boundariesDORIGNAC, D; DELCLOS, S; PHILLIPP, F et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2001, Vol 81, Num 11, pp 1879-1891, issn 1364-2812Conference Paper

Growth and characterization of nanostructured β-SiC via carbothermal reduction of SiO₂ xerogels containing carbon nanoparticlesMENG, G. W; CUI, Z; ZHANG, L. D et al.Journal of crystal growth. 2000, Vol 209, Num 4, pp 801-806, issn 0022-0248Article

Nucleation phenomena of nano-crystallites in as-pyrolysed Si-B-C-N ceramicsCAI, Y; ZIMMERMANN, A; PRINZ, S et al.Scripta materialia. 2001, Vol 45, Num 11, pp 1301-1306, issn 1359-6462Article

Characterization of the core structure of growth defects in CVD diamond films by UHREM: Z-shaped twin interactionsDORIGNAC, D; DELCLOS, S; PHILLIPP, F et al.Journal de physique. IV. 2001, Vol 83, pp Pr3.971-Pr3.978, issn 1155-4339Conference Paper

Study of point defect mobilities in zirconium during electron irradiation in a high-voltage electron microscopeGRIFFITHS, M; STYLES, R. C; WOO, C. H et al.Journal of nuclear materials. 1994, Vol 208, Num 3, pp 324-334, issn 0022-3115Article

Electron-beam induced in-situ transformations in SrFeO_3-δ single crystalsKIENLE, L; ADLER, P; STREMPFER, J et al.The Journal of physics and chemistry of solids. 2007, Vol 68, Num 1, pp 73-79, issn 0022-3697, 7 p.Article

Copper nanoparticles encapsulated in multi-shell carbon cagesSCHAPER, A. K; HOU, H; GREINER, A et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 1, pp 73-77, issn 0947-8396, 5 p.Article

TEM study of superstructure in a perovskite lead lanthanum zirconate stannate titanate ceramicCAI, Y; PHILLIPP, F; ZIMMERMANN, A et al.Acta materialia. 2003, Vol 51, Num 20, pp 6429-6436, issn 1359-6454, 8 p.Article

Photoluminescence and optical absorption caused by the F⁺centres in anodic alumina membranesLI, Y; LI, G. H; MENG, G. W et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 11, pp 2691-2699, issn 0953-8984Article

Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopyHAHN, G; GENG, C; ERNST, P et al.Superlattices and microstructures. 1997, Vol 22, Num 3, pp 301-305, issn 0749-6036Article

The coalescence of silicon layers grown over SiO₂ by liquid-phase epitaxy. I: Growth and coalescence of defect-free silicon layersNAGEL, N; BANHART, F; CZECH, E et al.Applied physics. A, Solids and surfaces. 1993, Vol 57, Num 3, pp 249-254, issn 0721-7250Article

The coalescence of silicon layers grown over SiO₂ by liquid-phase epitaxyBANHART, F; NAGEL, N; PHILLIPP, F et al.Applied physics. A, Solids and surfaces. 1993, Vol 57, Num 5, pp 441-448, issn 0721-7250Article

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxyBRANDT, O; TAPFER, L; CINGOLANI, R et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 18, pp 12599-12606, issn 0163-1829, 8 p.Article